Surface reconstructions on InN and GaN polar and nonpolar surfaces

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• 作者：David Segev ; Chris G. Van de Walle
• 关键词：Density functional calculations ; Energetics ; Reconstruction ; Surface energy ; Gallium nitride ; Indium nitride ; Surface defects
• 刊名：Surface Science
• 出版年：2007
• 出版时间：15 February 2007
• 年：2007
• 卷：601
• 期：4
• 页码：L15-L18
• 全文大小：738 K

文摘

We report a systematic and comprehensive computational study of surface reconstructions on GaN and InN surfaces in various orientations, including the polar c plane as well as the nonpolar a and m planes. For GaN we have identified several new metallic reconstructions under highly Ga-rich conditions on the nonpolar planes. For InN we find several distinct differences from the GaN case: the absence of a nitrogen-adatom reconstruction on the (0 0 0 1) plane; the presence of a single, metallic reconstruction over the entire stability range on the plane; and In-adlayer reconstructions on the (m) plane. An interesting “inverted polarity” defect structure on the (m) plane is also revealed.