Sub-electron noise measurements on repetitive non-destructive readout devices
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- 作者：Stefan Wö ; lfel ; Sven Herrmann ; Peter Lechner ; Gerhard Lutz ; Matteo Porro ; Rainer Richter ; Lothar Strü ; der and Johannes Treis
- 关键词：RNDR ; Sub-electron noise ; DEPFET ; Active pixel sensor ; Spectroscopy
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：2006
- 出版时间：15 October 2006
- 年：2006
- 卷：566
- 期：2
- 页码：536-539
- 全文大小：285 K
文摘
We demonstrate the use of a silicon detector based on a DEPFET device, with sub-electron readout noise ( ENC). The so-called repetitive non-destructive readout (RNDR) detector was realised by putting two single DEPFETs next to each other, and connecting their charge storing region by an additional gate. By every transfer from gate 1 to 2 and vice versa the signal charge can be measured non-destructively. By taking the average value of a large number dbcaae8894ab2"" title=""Click to view the MathML source"">(n) of these measurements the serial noise is reduced by . This way of readout does not only reduce the white noise, but also averages out the 1/f noise. Because the whole readout time is n times longer than the time for one readout, the device is interesting for low-noise and low-flux applications.
The main advantage of such a detector is the ability to reduce the influence of 1/f noise to the readout noise. The theoretically and experimentally achievable resolution for different operating parameters (leakage current, readout noise, number and duration of readouts) were investigated by Monte-Carlo simulations and measured on single pixel RNDR devices.