Tunable thermal transport properties of graphene by single-vacancy point defect

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• 作者：Yufei Gao^a ; ^{gaoyufei_hit@163.com} ; Yuhang Jing^b ; ^{jingyh@hit.edu.cn} ; Jiaqiu Liu^c ; Xiaochuan Li^a ; Qingyuan Meng^b
• 关键词：Graphene ; Single-vacancy point defect ; Thermal conductivity ; Molecular dynamics
• 刊名：Applied Thermal Engineering
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：113
• 期：Complete
• 页码：1419-1425
• 全文大小：3291 K
• 卷排序：113

文摘

TC of graphene depends not only on defect density, but also on defect configuration. The increase of phonon velocity leads to the higher TC of regular model. More obvious delocalization of phonon is a reason for higher TC of regular model. Non-monotonicity of TC is induced by the change of localization of partial phonon.