A thermodynamic model for the formation of bubble defects in multicrystalline silicon ingot

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• 作者：Chuanhai Gan^a ; Liuqing Huang^a ; Huixian Lai^a ; Zhilin Sheng^b ; Pengfei Xing^c ; Xuetao Luo^a ; ^{xuetao@xmu.edu.cn}
• 关键词：Multicrystalline silicon ; Directional solidification ; Thermodynamics ; Bubble defects ; Nucleation
• 刊名：Applied Thermal Engineering
• 出版年：2017
• 出版时间：25 February 2017
• 年：2017
• 卷：113
• 期：Complete
• 页码：1358-1365
• 全文大小：2168 K
• 卷排序：113

文摘

Bubble defects distributed randomly at the top of multicrystalline silicon ingot. Bubble defects were caused by gaseous SiO. Heterogeneous nucleation and growth of bubbles were discussed according to thermodynamics.