Enhancing properties of organic light-emitting diodes with LiF inside the hole transport layer

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• 作者：Enyu Zhou ; Zhenbo Deng ; Zhaoyue Lv ; Zheng Chen ; Denghui Xu ; Yongsheng Wang
• 关键词：LiF ; Hole mobility ; Buffer layer ; Blocking layer
• 刊名：Current Applied Physics
• 出版年：2009
• 出版时间：November 2009
• 年：2009
• 卷：9
• 期：6
• 页码：1365-1368
• 全文大小：388 K

文摘

A new device has been made by inserting thin LiF layer in N,N′-diphenyl-N,N′-bis(1-napthyl–phenyl)-1, 1′-biphenyl-4,4′-diamine (NPB), which has a configuration of ITO/NPB(20 nm)/LiF(0.5 nm)/NPB(20 nm)/Alq₃(60 nm)/LiF(0.5 nm)/Al. Compared with normal device, the device inserted LiF layer inside NPB (HTL) can improve its performance. The luminance and efficiency is about 1.4 and 1.3 folds high of the conventional structure, respectively. The suggestion mechanism is that the LiF in the NPB layer can block holes of NPB, and balance the holes and electrons. Consequently, there are more excitons formed to boost the diode’s luminance and efficiency. And it may offer some valuable references for OLED’s structure.