A study of electrical enhancement of polycrystalline MgZnO/ZnO bi-layer thin film transistors dependence on the thickness of ZnO layer

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• 作者：Jong Hoon Lee^a ; ^e ; Nak Woon Jang^b ; Young Yun^c ; Chang Yeon Kim^d ; Ji Hyun Lee^d ; Jin-Gyu Kim^d ; Hong Seung Kim^a ; ^{hongseung@kmou.ac.kr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：MgZnO/ZnO ; ZnO ; Thin film transistors ; RF-sputter ; Hetero-structure
• 刊名：Current Applied Physics
• 出版年：2015
• 出版时间：September 2015
• 年：2015
• 卷：15
• 期：9
• 页码：1010-1014
• 全文大小：1599 K

文摘

A polycrystalline MgZnO/ZnO bi-layer was deposited by using a RF co-magnetron sputtering method and the MgZnO/ZnO bi-layer TFTs were fabricated on the thermally oxidized silicon substrate. The performances with varying the thickness of ZnO layer were investigated. In this result, the MgZnO/ZnO bi-layer TFTs which the content of Mg is about 2.5 at % have shown the enhancement characteristics of high mobility (6.77–7.56 cm² V⁻¹ s⁻¹) and low sub-threshold swing (0.57–0.69 V decade⁻¹) compare of the ZnO single layer TFT (渭_FE = 5.38 cm² V⁻¹ s⁻¹; S.S. = 0.86 V decade⁻¹). Moreover, in the results of the positive bias stress, the 螖V_on shift (4.8 V) of MgZnO/ZnO bi-layer is the 2 V lower than ZnO single layer TFT (螖V_on = 6.1 V). It reveals that the stability of the MgZnO/ZnO bi-layer TFT enhanced compared to that of the ZnO single layer TFT.