Back-gate effects and mobility characterization in junctionless transistor

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• 作者：Mukta Singh Parihar^a ; ^c ; Fanyu Liu^a ; Carlos Navarro^a ; Sylvain Barraud^b ; Maryline Bawedin^a ; Irina Ionica^a ; Abhinav Kranti^c ; Sorin Cristoloveanu^a ; ^{sorin@minatec.grenoble-inp.fr" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Mobility ; Junctionless ; Back channel ; Coupling ; SOI-MOSFETs
• 刊名：Solid State Electronics
• 出版年：2016
• 出版时间：November 2016
• 年：2016
• 卷：125
• 期：Complete
• 页码：154-160
• 全文大小：953 K

文摘

This work addresses the effect of inter-gate coupling on back-channel characteristics of planar accumulation-mode junctionless (JL) MOSFETs, fabricated with advanced Fully Depleted Silicon-on-Insulator (FDSOI) technology. A systematic methodology to extract and distinguish the contributions of bulk and accumulation-mode mobility has been developed. Front-gate voltage strongly controls the transport properties of back channel in ultra-thin heavily doped JL devices. It is demonstrated that both volume and accumulation-layer mobility values increase when the front interface is in accumulation.