Investigation of veritcal graded channel doping in nanoscale fully-depleted SOI-MOSFET
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- 作者：Zeinab Ramezani ; Ali A. Orouji ; aliaorouji@semnan.ac.ir" class="auth_mail" title="E-mail the corresponding author
- 关键词：Fully-depleted silicon-on-insulator (SOI) ; Self-heating effect ; Leakage current ; Short channel effects ; Hot-carrier degradation ; Electron temperature
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：98
- 期：Complete
- 页码：359-370
- 全文大小：2230 K
文摘
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Investigation of a FD-SOI MOSFET including an amended channel doping.
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The amended channel doping is a vertical graded doping.
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Improvement of the electrical and thermal performances.
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Optimization and design consideration.