Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

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• 作者：Roland Nowak^a ; ^b ; Daniel Moraru^b ; Takeshi Mizuno^b ; Ryszard Jablonski^a ; Michiharu Tabe^b ; ^{romtabe@rie.shizuoka.ac.jp" class="auth_mail}
• 关键词：pn junction ; Kelvin probe force microscope ; Silicon-on-insulator ; Dopants ; Dielectric confinement
• 刊名：Thin Solid Films
• 出版年：30 April, 2014
• 年：2014
• 卷：557
• 期：Complete
• 页码：249-253
• 全文大小：905 K

文摘

Nanoscale pn junctions have been investigated by Kelvin probe force microscopy and several particular features were found. Within the depletion region, a localized noise area is observed, induced by temporal fluctuations of dopant states. Electronic potential landscape is significantly affected by dopants with ground-state energies deeper than in bulk. Finally, the effects of light illumination were studied and it was found that the depletion region shifts its position as a function of light intensity. This is ascribed to charge redistribution within the pn junction as a result of photovoltaic effect and due to the impact of deepened-level dopants.