Study on the electrical transport properties of La_2/3Ba_1/3MnO₃:Ag_0.04/LaAlO₃ (001) films

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• 作者：Xiang Liu ; ^{lxjim@126.com" class="auth_mail" title="E-mail the corresponding author} ; Shuang Zhao ; Shao-Chun Zhang
• 关键词：La2/3Ba1/3MnO3 ; Agx ; Electrical transport properties ; Pulsed laser deposition technique ; Metal-insulator transition temperature
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：504
• 期：Complete
• 页码：92-95
• 全文大小：724 K

文摘

La_2/3Ba_1/3MnO₃: wt%Ag_x (LBMO:Ag_x, x=0.04) films were prepared on single crystalline (001)-orientated LaAlO₃ substrates by pulsed laser deposition technique. All the samples show along the (00l) orientation in rhombohedral structure with R3c space group. The surface roughness (Ra), insulator-metal transition temperature (Tp) and resistivity at Tp (ρ_Tp) of the LBMO:Ag_0.04 films reached optimal values of 3.29 nm, 288 K and 0.033 Ω cm at 740 °C, respectively. The improvement of electrical transport properties in the films are attributed to the optimal growth temperature and Ag-doping improve the microstructure of the surfaces, grain boundaries (GBs) in connectivity and better crystallization. In addition, the electrical conduction behaviors can be well fitted with the grain/domain boundary, electron–electron and magnon scattering mechanisms in the ferromagnetic metallic region (T<Tp), as well as with the adiabatic small polaron hopping mechanism in the paramagnetic insulating region (T>Tp).