Low temperature growth of graphene using inductively-coupled plasma chemical vapor deposition

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• 作者：Sami Pekdemir ; M. Serdar Onses ; ^{onses@erciyes.edu.tr} ; Mehmet Hancer
• 关键词：Graphene ; Inductively-coupled plasma ; Chemical vapor deposition
• 刊名：Surface and Coatings Technology
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：309
• 期：Complete
• 页码：814-819
• 全文大小：1093 K
• 卷排序：309

文摘

The effects of the plasma power, deposition time and CH4 flow rate on the growth of graphene AB-stacked bilayer graphene films are grown at a temperature as low as 300 °C. The bilayer graphene films exhibit surface enhanced Raman scattering effects.