Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH₃ as plasma reactant

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• 作者：Il-Kwon Oh^a ; Hyungjun Kim^a ; ^{hyungjun@yonsei.ac.kr} ; Han-Bo-Ram Lee^b ; ^{hbrlee@inu.ac.kr}
• 关键词：Co PE-ALD ; Residual gas analysis ; Reaction mechanism ; Cobaltocene ; NH3 plasma
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：17
• 期：3
• 页码：333-338
• 全文大小：908 K
• 卷排序：17

文摘

Reaction mechanisms for the formation of Co thin films by PE-ALD using NH3 plasma. Two half-reactions monitored using ex situ XPS and an in situ RGA. A key medium of N atoms for the deposition of Co thin films.