The influence of methane flow rate on microstructure and surface morphology of a-SiC:H thin films prepared by plasma enhanced chemical vapor deposition technique

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• 作者：Lihua Jiang^a ; ^{jlihua107@163.com} ; Xinyu Tan^a ; ^b ; ^{husttanxin@mail.tsinghua.edu.cn} ; Ting Xiao^a ; ^b ; Peng Xiang^a
• 关键词：Hydrogenated amorphous silicon carbide ; Thin films ; Plasma-enhanced chemical vapor deposition ; sp3 hybridized carbon ; Surface morphology
• 刊名：Thin Solid Films
• 出版年：2017
• 出版时间：31 January 2017
• 年：2017
• 卷：622
• 期：Complete
• 页码：71-77
• 全文大小：1462 K
• 卷排序：622

文摘

The phase of sp3 hybridized carbon is embedded in a-SiC:H film. CH4 flow rate had a large impact on component and surface morphology of the film. The silicon bonding environment didn't change with increasing CH4 flow rate. The H bonded to sp3 hybridized carbon phase mainly derives from the CHn radicals. Surface morphology and deposition rate of the film are controlled by CH4 flow rate.