Optimization of post deposition annealing temperature of direct current magnetron reactive sputtered zirconium titanate thin films for refractory oxide applications

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• 作者：D. Jhansi Rani^a ; ^{jhansiranidvr@gmail.com} ; A. GuruSampath Kumar^a ; ^b ; T. Subba Rao^a
• 关键词：Zirconium titanate thin film ; DC magnetron reactive sputtering ; post deposition rapid thermal annealing and refractory oxides
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：694
• 期：Complete
• 页码：694-702
• 全文大小：2407 K
• 卷排序：694

文摘

ZTO films were treated with rapid thermal annealing in oxygen atmosphere. The films exhibited a high transmittance over a wide range of wave lengths. The structural rearrangement and re crystallization started at an annealing temperature of 300 °C. Further higher temperatures resulted in the re evaporation of deposited atoms. It is found that the optimal annealing temperature range is 400–500oC.