Molecular dynamics simulation of nano-indentation of (111) cubic boron nitride with optimized Tersoff potential
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- 作者：Yinbo Zhaoa ; Xianghe Penga ; b ; xhpeng@cqu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Tao Fua ; Cheng Huanga ; Chao Fenga ; Deqiang Yinc ; Zhongchang Wanga ; d ; zcwang@wpi-aimr.tohoku.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Molecular dynamics simulation ; Tersoff potential ; Nano-indentation ; Cubic boron nitride ; Dislocation slip ; Stacking fault energy
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：30 September 2016
- 年：2016
- 卷：382
- 期：Complete
- 页码：309-315
- 全文大小：2754 K
文摘
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We optimize Tersoff potential to simulate the cBN better under nanoidentation.
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Dislocations slip more easily along <110> and <112> directions on the {111} plane.
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Shuffle-set dislocation slip along <112> direction on {111} plane first.
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A tetrahedron structure is found in the initial stage of the indentation.