Reduction in point defects of sol-gel derived ZnO thin films with oxygen ambient
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- 作者：Amanpal Singha ; amanbkn@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Dinesh Kumarb ; P.K. Khannac ; Mukesh Kumarb
- 关键词：Thin films ; ZnO ; Sol-Gel preparation ; Defects ; Photoluminescence
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：15 November 2016
- 年：2016
- 卷：183
- 期：Complete
- 页码：365-368
- 全文大小：1035 K
文摘
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Highly c-axis orientated ZnO thin films deposited with sol-gel spin coating process.
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Reduction in point defects with the oxygen availability during post annealing.
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Resistivity can be tailored in ZnO thin films by oxygen flow rate during annealing.
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Ferromagnetic properties influenced with the availability of oxygen during annealing.