Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO3 film
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文摘

BFO films are epitaxially grown on NSTO (001) substrate by hydrothermal method.

The Pt/BFO/NSTO devices exhibit multilevel bipolar resistive switching behavior.

The Pt/BFO/NSTO devices possess excellent retention and endurance characteristics.

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