Activation energy of thermal desorption of silicon oxide layers on silicon substrates

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• 作者：Yoshiharu Enta ; ^{enta@hirosaki-u.ac.jp} ; Shodai Osanai ; Takahito Ogasawara
• 关键词：Silicon oxide ; Thermal desorption ; Void growth ; Desorption kinetics ; Activation energy ; Frequency factor
• 刊名：Surface Science
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：656
• 期：Complete
• 页码：96-100
• 全文大小：627 K
• 卷排序：656

文摘

Thermal desorption of silicon oxides from 20 to 120 nm in thickness are investigated. Activation energy of the desorption is ~4 eV irrespective of the oxide thickness. The rate-limiting step is the reaction at the void periphery. Frequency factor decreases as the inverse square of the oxide thickness.