Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization
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- 作者：Dharmendra Singh Yadav ; tech.dharmendra26@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Dheeraj Sharma dheeraj24482@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Bhagwan Ram Raad bhagwanramraad@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Varun Bajaj bajajvarun056@yahoo.co.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Band to band tunneling ; Dual material gate ; Source pocket ; Gate underlap ; Hetero gate dielectric
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：96
- 期：Complete
- 页码：36-46
- 全文大小：3832 K
文摘
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A comparative study is performed for different TFET.
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Dual work function of gate provides enhancement in ON state current.
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Under lapping of gate at drain end provides suppression of ambipolar nature.
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Combination of dual workfunction and under lapping gives improved ON current and suppressed ambipolar nature.
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Underlap HGD DW TFET provides better performance.