Anisotropic etching was carried out on n-type Si (100) surfaces.

Local roughness increased initially with time and decreased later on thereby disobeying Family-Vicsek scaling conditions.

The growth exponent β indicated a rapid out-of-plane growth as well as faceting of the pyramids on the surface.

The surface roughness evolution was found to follow an eroding system characterized by quenched random fluctuations.

Atoms having lower binding energies tend to get dislodged and diffuse from about 900 °C.