Characterization of interfaces in mosaic CVD diamond crystal
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- 作者：Anatoly B. Muchnikova ; mab1@appl.sci-nnov.ru" class="auth_mail" title="E-mail the corresponding author ; Dmitry B. Radisheva ; Anatoly L. Vikhareva ; Alexei M. Gorbacheva ; d ; Anatoly V. Mitenkinb ; Mikhail N. Drozdovc ; Yuri N. Drozdovc ; Pavel A. Yuninc ; d
- 关键词：A2. Homoepitaxial growth ; Mosaic diamond ; PACVD ; SIMS ; Single crystal diamond
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 May 2016
- 年：2016
- 卷：442
- 期：Complete
- 页码：62-67
- 全文大小：2103 K
文摘
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Accretion of single crystal diamond plates in a mosaic crystal occurs even in the case of great misorientation.
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No correlation was found between the misorientation angle of the accreted crystals and H in the boundary.
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The mechanical stresses appear during the fabrication of the mosaic CVD diamond crystal.
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A major part of the stresses could be released during thermochemical polishing.