Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

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• 作者：Bé ; la Pé ; cz^a ; ^{pecz.bela@ttk.mta.hu} ; Lajos Tó ; th^a ; Á ; rpá ; d Barna^a ; George Tsiakatouras^b ; Adebowale Olufunso Ajagunna^b ; ¹ ; Andrá ; s Ková ; cs^c ; ^d ; Alexandros Georgakilas^b
• 关键词：Diamond ; GaN ; Transmission electron microscopy ; MBE
• 刊名：Diamond and Related Materials
• 出版年：2013
• 出版时间：April, 2013
• 年：2013
• 卷：34
• 期：Complete
• 页码：9-12
• 全文大小：896 K

文摘

Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer.