(001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni₂Si formation and the resulting barrier height changes

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• 作者：Sven Tengeler^a ; ^b ; ^{stengeler@surface.tu-darmstadt.de} ; Bernhard Kaiser^a ; Didier Chaussende^b ; Wolfram Jaegermann^a
• 关键词：3C-SiC ; Nickel ; Interface experiment ; XPS ; Barrier height ; Band diagram
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 April 2017
• 年：2017
• 卷：400
• 期：Complete
• 页码：6-13
• 全文大小：2173 K
• 卷排序：400

文摘

Schottky behavior (ΦB = 0.41 eV) and Fermi level pining were found pre annealing. Ni2Si formation was confirmed for 5 min at 850 °C. 3C/Ni2Si Fermi level alignment is responsible for ohmic contact behavior. Wet chemical etching (Si–OH/C–H termination) does not impair Ni2Si formation.