Electromechanical properties of BaTiO₃-xBaSnO₃ thin films prepared via combinatorial sputtering

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• 作者：Hongbo Cheng^a ; ^b ; ^c ; Hirotaka Hida^c ; Jun Ouyang^a ; ^b ; ^d ; ^{ouyangjun@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Isaku Kanno^c ; ^{kanno@mech.kobe-u.ac.jp" class="auth_mail" title="E-mail the corresponding author}
• 关键词：BaTiO3 ; Doping ; Combinatorial method ; Magnetron sputtering ; Si
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：1597-1601
• 全文大小：779 K

文摘

(1−x)BaTiO₃-xBaSnO₃ (BT-xBS, 0≤x≤0.20) perovskite thin films were deposited on Pt/Ti/Si substrates with uniaxial graded composition by using a dual-target combinatorial sputtering technique. These films were highly (101)-oriented and showed strong composition dependence in their electromechanical properties. The maximum value of the relative dielectric constant was 925 at around x=0.028, where the transverse piezoelectric coefficient |e_{31, f}| also peaked at about 1.5–1.9 C/m². This |e_{31, f}| value is higher than those of epitaxial BaTiO₃ thin films. Our results indicate that BT-xBS is a promising substitute of lead-based perovskites for applications in piezoelectric MEMS devices.