Analysis on block-centered finite differences of numerical simulation of semiconductor device detector

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• 作者：Yirang Yuan ; ^a ; ^{yryuan@sdu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; ^{cfli1218@163.com" class="auth_mail" title="E-mail the corresponding author} ; Yunxin Liu^a ; Changfeng Li^a ; ^b ; Tongjun Sun^a ; Liqin Ma^c
• 关键词：Three-dimensional photoconduction detector ; Porous flow model ; Block-centered differences on nonuniform partition ; Super-convergent numerical analysis ; Numerical simulation
• 刊名：Applied Mathematics and Computation
• 出版年：2016
• 出版时间：10 April 2016
• 年：2016
• 卷：279
• 期：Complete
• 页码：1-15
• 全文大小：985 K

文摘

A finite difference scheme on block-centered method is presented on nonuniform partition to simulate numerically three-dimensional transient problems of semiconductor detector of photoconduction. Applying the method of mixed finite element, the principle of duality, the induction hypothesis, the prior error theory of differential equations and other special techniques, we give error estimates of second-order accuracy in l²-norm. The numerical simulation is super-convergent for the electric field intensity, really important in actual applications.