Temperature dependency of the strain distribution induced by TSVs in silicon: A comparative study between micro-Laue and monochromatic nano-diffraction

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• 作者：B. Vianne^a ; ^b ; S. Escoubas^a ; ^{stephanie.escoubas@im2np.fr" class="auth_mail" title="E-mail the corresponding author} ; C. Krauss^a ; M.-I. Richard^a ; ^c ; S. Labat^a ; G. Chahine^c ; J.-S. Micha^d ; T. Schü ; lli^c ; V. Fiori^b ; A. Farcy^b ; O. Thomas^a
• 关键词：Strain ; Stress ; Through Silicon Via ; Micro-Laue ; Nanodiffraction ; Finite elements modeling
• 刊名：Microelectronic Engineering
• 出版年：2016
• 出版时间：20 April 2016
• 年：2016
• 卷：156
• 期：Complete
• 页码：59-64
• 全文大小：1509 K

文摘

The strain distribution induced by TSVs is extensively studied in silicon by using submicron resolution synchrotron X-ray diffraction techniques. Simulations with finite elements are performed to interpret the experimental strain results. Stress and strain in silicon are found to be small at room temperature (< 7 × 10^− 5), while measurements and simulations at annealing temperature (400 °C) show a reverse sign of strain and support a plastic behavior of copper in some regions of the TSV.