Extended line defects in BN, GaN, and AlN semiconductor materials: Graphene-like structures
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- 作者：Dulce C. Camacho-Mojica ; Florentino Ló ; pez-Urí ; as ; flo@ipicyt.edu.mx" class="auth_mail" title="E-mail the corresponding author
- 关键词：Boron nitride ; Aluminum nitride ; Gallium nitride ; Graphene-like ; Ab-initio ; Defects ; III&ndash ; V materials
- 刊名：Chemical Physics Letters
- 出版年：2016
- 出版时间：16 May 2016
- 年：2016
- 卷：652
- 期：Complete
- 页码：73-78
- 全文大小：2608 K
文摘
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Extended line defects (ELD) formed by 8-4 membered rings are energetically stable.
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ELD could help to understand the grain boundaries in two dimensional materials.
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It was found that the ELD are more stable in GaN and AlN than in BN monolayers.
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The band gap is reduced when ELD are introduced into the honeycomb structures.
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Nanoribbons and monolayers with ELD exhibited in-gap states.