Demonstration of p-type 3C–SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C

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• 作者：Li Wang ; ^a ; ^{l.wang@griffith.edu.au"" rel=""nofollow} ; Sima Dimitrijev^a ; Jisheng Han^a ; Philip Tanner^a ; Alan Iacopi^a ; Leonie Hold^a
• 关键词：A1. Crystal morphology ; A1. X-ray diffraction ; A3. Chemical vapor deposition processes ; B1. Silicon carbide ; B2. Semiconducting materials
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 August 2011
• 年：2011
• 卷：329
• 期：1
• 页码：67-70
• 全文大小：443 K

文摘

The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C–SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.8×10¹⁹ to 2.1×10²⁰ cm⁻³, proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed.