Growth, surface treatment and characterization of polycrystalline lead iodide thick films prepared using close space deposition technique

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• 作者：Xinghua Zhu ; Hui Sun ; Dingyu Yang ; Xiaolin Zheng
• 关键词：Lead iodide ; Polycrystalline film ; Surface treatment ; Dark current ; Photo-to-dark current ratio
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2012
• 出版时间：1 November, 2012
• 年：2012
• 卷：691
• 期：Complete
• 页码：10-15
• 全文大小：1095 K

文摘

Lead iodide (PbI₂) polycrystalline thick films were fabricated on glass substrates with a conductive indium-tin-oxide layer using a close space deposition technique. The morphology of the as-deposited PbI₂ films is typically and highly oriented polycrystalline structure, made up of microcrystal platelets upright on the substrate plane. Two techniques including the surface mechanical cutting and after-growth cadmium telluride coating were employed to improve the films¡ä surface properties. It was shown that both of the film surface treatment methods markedly decreased the dark current of PbI₂ films. The photo-to-dark current ratio of about 2.05 under ²⁴¹Am ¦Ã-ray source with activity of 2.78 ¦ÌCi irradiation was obtained from the film treated using both surface cutting and after-growth CdTe coating. Charge transport characteristics of these films were measured and the hole mobility 7.7¡Á10^?2-1.67¡Á10^?1 cm²/V s was estimated.