Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure

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• 作者：Natsuo Tatsumi^a ; ^c ; ^{tatsumi-natsuo@sei.co.jp} ; Kenji Tamasaku^b ; Toshimichi Ito^c ; Hitoshi Sumiya^a
• 关键词：Diamond ; Defect ; Dislocation ; Stacking fault ; Annealing ; High temperature ; X-ray topography
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：458
• 期：Complete
• 页码：27-30
• 全文大小：2917 K
• 卷排序：458

文摘

The behavior of stacking faults (SFs) in diamond at high temperatures was investigated. The SFs belong to the Shockley type because SFs disappeared after annealing. The dislocation in (111) growth sector on the slip plane can split into two partials and a SF. The dislocation in (001) growth sector is not on the slip plane and can hardly split. Thus, SFs exist only in the (111) growth sector of type IIa diamond.