Thermoluminescence glow curves in preheated feldspar samples: An interpretation based on random defect distributions
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文摘
TL glow curves for four types of preheated feldspar samples were measured. The experimental data is analyzed using two different methods within a model of localized electronic recombination. The model deals with random distribution of donor-acceptor pairs, with nearest-neighbor interaction. Low temperature TL signal for preheat below 260 °C is consistent with the presence of a continuous distribution of energies. A single trap characterized by a single activation energy E = (1.20 ± 0.09) eV at temperatures higher than 300 °C.

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