Investigation of defects in indium doped TiO₂ thin films using electrical and optical techniques

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• 作者：Noor Alhuda Al Saqri^a ; ^b ; ^{ppxnaal@nottingham.ac.uk} ; Aniruddha Mondal^c ; Jorlandio Francisco Felix^d ; Yara Galvã ; o Gobato^e ; Vanessa Orsi Gordo^e ; Hind Albalawi^a ; Dler Jameel^a ; ^f ; Haifa Alghamdi^a ; Faisal Al Mashary^a ; David Taylor^a ; Mahmmoud S. Abd El-sadek^g ; Mohamed Henini^a
• 关键词：TiO2 ; In doping ; I&ndash ; V ; DLTS ; PL
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 March 2017
• 年：2017
• 卷：698
• 期：Complete
• 页码：883-891
• 全文大小：2313 K
• 卷排序：698

文摘

Defect levels into the band gap of Indium (In) doped TiO2 are investigated. Enhanced Raman phase related to In-O is observed in the Ti-O-In alloy. The low In-doped TiO2 has lower leakage current compared to the highly doped device. DLTS shows the increase of Indium (In) doping reduces the traps concentration. Activation energy increases with In doping into TiO2 as observed from PL emission.