Electrical Characterisation of electron beam exposure induced Defects in silicon

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• 作者：Helga T. Danga ; ^{helga.danga@up.ac.za" class="auth_mail" title="E-mail the corresponding author} ; Francois D. Auret ; Sergio M.M. Coelho ; Mmantsae Diale
• 关键词：Silicon ; Electron beam exposure ; DLTS ; Laplace-DLTS
• 刊名：Physica B: Physics of Condensed Matter
• 出版年：2016
• 出版时间：1 January 2016
• 年：2016
• 卷：480
• 期：Complete
• 页码：206-208
• 全文大小：336 K

文摘

The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.