A plasma assisted in situ restoration process for sidewall damaged ULK dielectrics

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• 作者：Nicole Koehler^b ; ^{nicole.koehler@zfm.tu-chemnitz.de" class="auth_mail" title="E-mail the corresponding author} ; Tobias Fischer^b ; Sven Zimmermann^a ; ^b ; Stefan E. Schulz^a ; ^b
• 关键词：Microelectronics ; Dielectrics ; Ultra low-k materials ; Low-k damage ; k-value restore
• 刊名：Microelectronic Engineering
• 出版年：2016
• 出版时间：20 April 2016
• 年：2016
• 卷：156
• 期：Complete
• 页码：116-120
• 全文大小：820 K

文摘

This paper describes a novel in situ restoration process to repair damaged porous low-k materials by a plasma assisted approach. The main advantage is the enhanced repair efficiency due to the formation of small plasma activated multiple repairing fragments as well as the in situ handling to avoid a further k-value increase by water uptake. A liquid repair chemistry was evaporated and inserted into downstream microwave plasma to form activated species with repair character and to prevent the contact of porous low-k materials with UV irradiation and ion bombardment. In this study Octamethylcyclotetrasiloxane (OMCTS) and Bis(dimethylamino)dimethylsilane (DMADMS) were chosen for blanket samples with a k-value of 2.4. Furthermore OMCTS was investigated on patterned ULK trench structures of 62 nm width. Besides the OMCTS flow rate, the addition of oxygen, methane or nitrogen was studied with regards to the formation of repair fragments and restoration efficiency.