Induced metal-insulator transition and temperature independent charge transport in NdNiO_3-δ thin films

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• 作者：Mahesh Chandra^a ; Sarmistha Das^b ; Fozia Aziz^a ; Manoj Prajapat^b ; K.R. Mavani^a ; ^c ; ^{krushna@iiti.ac.in}
• 关键词：Metal-insulator transition ; Thin film ; Perovskite ; Dimensionality ; Nickelate ; Oxygen annealing
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：696
• 期：Complete
• 页码：423-427
• 全文大小：1255 K
• 卷排序：696

文摘

Resistivity varies very systematically with increasing oxygen content in NdNiO3-δ films. Dimensionality crossover induced metal-insulator transition is observed by reducing the thickness of the films to 5 nm. A temperature independent charge transport is observed in a very wide temperature range in some of the films. Temperature coefficient of resistance varies systematically, and can be controlled by thickness/oxygen variation.