C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

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• 作者：Jianliang Lin^a ; ^{Jianliang.lin@swri.org} ; Roman Chistyakov^b
• 关键词：Aluminum nitride (AlN) films ; Deep oscillation magnetron sputtering (DOMS) ; High power impulse magnetron sputtering (HiPIMS) ; C-axis orientation ; Piezoelectricity
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：129-137
• 全文大小：2717 K
• 卷排序：396

文摘

Highly <0001> orientated AlN films were deposited by DOMS technique. Controlled ion flux bombardment improved the <0001> texture and crystalline quality. Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. Improved c-axis alignment accompanied with stress relaxation with increasing film thickness.