Nanostructured TiO₂ thin film memristor using hydrothermal process

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• 作者：T.D. Dongale ; S.S. Shinde ; R.K. Kamat ; K.Y. Rajpure
• 关键词：Hydrothermal process ; Titanium oxide ; Memristors
• 刊名：Journal of Alloys and Compounds
• 出版年：25 April, 2014
• 年：2014
• 卷：593
• 期：Complete
• 页码：267-270
• 全文大小：567 K

文摘

Fabrication of memristor device (Ag/TiO₂/Al) with TiO₂ active layer using hydrothermal process is reported. The structural, surface morphological and optical properties of deposited TiO₂ films are characterized using X-ray diffraction (XRD), Raman, Atomic force microscope (AFM) and spectroscopic reflectometer techniques respectively. XRD and AFM studies revealed the presence of nanostructured anatase TiO₂ with tetragonal crystal structure. The optical reflectance of the deposited TiO₂ films is observed to be 15-22% in the visible region. The bipolar resistive switching behavior within the low operating voltage (卤0.68 V) is observed in prepared Ag/TiO₂/Al memristor. Our results confirm that the hydrothermal route provides breakthrough elucidation in the electronic memory device fabrication. A possible mechanism for the resistive switching behavior has discussed.