BaZr_xTi_2?xO₅ thin films prepared by sol-gel method

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• 作者：Dongyun Guo ; ^{guodongyun@gmail.com} ; Yiping Gong ; Chuanbin Wang ; Qiang Shen ; Lianmeng Zhang
• 关键词：BaZrxTi2&minus ; xO5 thin film ; Sol&ndash ; gel method ; Zr content ; Dielectric property ; Ferroelectric property
• 刊名：Journal of Alloys and Compounds
• 出版年：2013
• 出版时间：25 April, 2013
• 年：2013
• 卷：557
• 期：Complete
• 页码：34-39
• 全文大小：1766 K

文摘

BaZr_xTi_2?xO₅ thin films (x = 0, 0.01, 0.02, 0.03 and 0.04) were prepared by sol-gel method. The effect of the Zr content on microstructure and electrical properties of BaZr_xTi_2?xO₅ thin films was investigated. The single-phase BaZr_xTi_2?xO₅ films were obtained at 700 ¡ãC with x = 0-0.02, and 800-900 ¡ãC with x = 0-0.04. With increasing the Zr content, the annealing temperature to obtain the single BaTi₂O₅ phase increased. The dielectric and ferroelectric properties were improved due to the Zr substitution. The BaZr_xTi_2?xO₅ thin film with x = 0.02 had the maximum dielectric constant (¦Å_r) of 53 at 1 MHz, and the BaZr_xTi_2?xO₅ thin film with x = 0.01 had the maximum remnant polarization (2P_r) of 1.37 ¦ÌC cm^?2.