Effect of oxygen partial pressure and annealing on nanocrystalline p-type ZnO:Sb thin films

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• 作者：K. Samanta^a ; ^{ksamanta@gmail.com} ; A.K. Arora^a ; S. Hussain^b ; S. Chakravarty^b ; R.S. Katiyar^c
• 关键词：p-Type ZnO ; Thin films ; Photoluminescence ; Defect states
• 刊名：Current Applied Physics
• 出版年：2012
• 出版时间：September, 2012
• 年：2012
• 卷：12
• 期：5
• 页码：1381-1385
• 全文大小：1319 K

文摘

We have investigated the effect of oxygen partial pressure and annealing on nanocrystalline p-type Sb-doped ZnO thin films, grown by pulsed laser deposition, with hole concentration of 6.5?¡Á?10¹⁸/cm³ and mobility of 53?cm²/V-s. Uses of higher working pressure or annealing are found to reduce carrier concentration. A strong correlation is observed between carrier concentration and the violet (3.02?eV) emission related to free Zn-vacancy; stronger the violet emission, smaller the carrier concentration. In?contrast to earlier suggestion of using higher oxygen pressure for obtaining p-type conductivity, the present results show a deterioration of the quality of film.