Annealing effects of co-doping with Al and Sb on structure and optical–electrical properties of the ZnO thin films

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• 作者：W.W. Zhong ; F.M. Liu ; L.G. Cai ; C.C. Zhou ; P. Ding ; H. Zhang
• 关键词：ZnO thin films ; Co-doped with Al and Sb ; Sol– ; gel spin-coating method ; Annealing at different temperature ; Optical and electrical properties
• 刊名：Journal of Alloys and Compounds
• 出版年：2010
• 出版时间：11 June 2010
• 年：2010
• 卷：499
• 期：2
• 页码：265-268
• 全文大小：703 K

文摘

The ZnO thin films co-doped with Al and Sb have been successfully deposited by a sol–gel spin-coating method on glass substrates and annealed at different temperature for 2 h in air. The annealing effects of different temperature on the structure and biaxial stress were characterized by X-ray diffraction. The results revealed that the annealed ZnO thin films mainly consist of ZnO with wurtzite structure, and the biaxial stress is lower during annealed at 550 °C. The annealed films have high transmittance in the visible region and show sharp absorption edges in the UV region. The optical band gap E_g values are 2.95, 3.03, 3.18 and 3.15 eV, which corresponding to the films annealed at 450, 500, 550, 600 °C, respectively. The resistivity of thin films reaches a minimum when the annealing temperature at 550 °C. The conducting mechanism is contributed to Sb substitute for Zn inducing two corresponding Zn vacancies.