Effect of different annealing temperature on Sb-doped ZnO thin films prepared by pulsed laser deposition on sapphire substrates

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• 作者：Ziwen Zhao^a ; ^b ; Lizhong Hu^a ; ^b ; Heqiu Zhang^a ; ^b ; ^{zh_zwen@yahoo.com.cn} ; Jingchang Sun^a ; ^b ; Jiming Bian^a ; ^b ; Jianze Zhao^a ; ^b
• 关键词：Sb-doped ZnO ; Pulsed laser deposition ; Hall-effect-measurement ; X-ray diffraction ; Scan electronic microscopy ; Photoluminescence spectra
• 刊名：Applied Surface Science
• 出版年：2011
• 出版时间：15 March 2011
• 年：2011
• 卷：257
• 期：11
• 页码：5121-5124
• 全文大小：662 K

文摘

Influence of annealing temperature on the properties of Sb-doped ZnO thin films were studied. Hall measurement results indicated that the Sb-doped ZnO annealed at 950 °C was p-type conductivity. X-ray diffraction (XRD) results indicated that the Sb-doped ZnO thin films prepared at the experiments are high c-axis oriented. It was worth noting that p-type sample had the worst crystallinity. The measurements of low-temperature photoluminescence (PL) spectra indicate that the sample annealed at the temperatures of 950 °C showed strong acceptor-bound exciton (A⁰X) emission, and confirmed that it is related to Sb-doping by comparing with the undoped ZnO low-temperature PL spectrum.