Synthesis and characterization of Sb doped ZnO thin films for photodetector application

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• 作者：S.V. Mohite ; K.Y. Rajpure
• 关键词：Structural ; Morphological ; Electrical properties ; MSM UV photodetector
• 刊名：Optical Materials
• 出版年：February, 2014
• 年：2014
• 卷：36
• 期：4
• 页码：833-838
• 全文大小：1464 K

文摘

We report properties of metal-semiconductor-metal (MSM) photoconductive UV detectors based on Sb-doped ZnO thin films. Highly c-axis oriented Sb-doped ZnO thin films were prepared by spray pyrolysis technique onto glass substrates. Optical properties and photocurrent measurements were carried out to study optoelectronic properties of Sb-doped ZnO thin films. These films are highly transparent in visible region and exhibit a steep absorption edge at 365 nm. The electrical resistivity measurement showed semiconducting behaviors of Sb-doped ZnO thin films. All Sb-doped ZnO thin films exhibit n-type electrical conductivity. I-V characteristics of photodetector devices were analyzed by applying 5 V bias. The 3% Sb doped ZnO photodetector shows higher responsivity of 5.1 A/W at 365 nm under 10 渭W/cm² photo-illumination. In order to check the maximal (for the rise) or minimal (for the fall) level of photocurrent, the results on photodetector for 30 s ON and OFF cycles of illumination have been reported.