Epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane sapphire substrates by RF magnetron sputtering

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• 作者：Hou-Guang Chen ; Sung-Po Hung
• 关键词：XRD ; TEM ; Epitaxial growth ; ZnO ; Doping
• 刊名：Journal of Alloys and Compounds
• 出版年：15 February, 2014
• 年：2014
• 卷：586
• 期：supp_S1
• 页码：S339-S342
• 全文大小：1862 K

文摘

In this study, the epitaxial growth of Sb-doped nonpolar a-plane ZnO thin films on r-plane () sapphire substrates was performed by radio-frequency magnetron sputtering. The influence of the sputter deposition conditions and Sb doping concentration on the microstructural and electrical properties of Sb-doped ZnO epitaxial films was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and the Hall-effect measurement. The measurement of the XRD phi-scan indicated that the epitaxial relationship between the ZnO:Sb layer and sapphire substrate was and . The out-of-plane a-axis lattice parameter of ZnO films was reduced monotonically with the increasing Sb doping level. The cross-sectional transmission electron microscopy (XTEM) observation confirmed the absence of any significant antimony oxide phase segregation across the thickness of the Sb-doped ZnO epitaxial film. However, the epitaxial quality of the films deteriorated as the level of Sb dopant increased. The electrical properties of ZnO:Sb film are closely correlated with post-annealing conditions and Sb doping concentrations.