文摘
Nanocomposite thin films of tin oxide (SnO2)/titanium oxide (TiO2) were grown on silicon (1 0 0) substrates by electron beam evaporation deposition technique using sintered nanocomposite pellet of SnO2/TiO2 in the percentage ratio of 95:5. Sintering of the nanocomposite pellet was done at 1300 掳C for 24 h. The thicknesses of these films were measured to be 100 nm during deposition using piezo-sensor attached to the deposition chamber. TiO2 doped SnO2 nanocomposite films were irradiated by 100 MeV Au8+ ion beam at fluence range varying from 1 脳 1011 ions/cm2 to 5 脳 1013 ions/cm2 at Inter University Accelerator Center (IUAC), New Delhi, India. Chemical properties of pristine and ion irradiation modified thin films were characterized by Fourier Transform Infrared (FTIR) spectroscopy. FTIR peak at 610 cm鈭? confirms the presence of O-Sn-O bridge of tin (IV) oxide signifying the composite nature of pristine and irradiated thin films. Atomic Force Microscope (AFM) in tapping mode was used to study the surface morphology and grain growth due to swift heavy ion irradiation at different fluencies. Grain size calculations obtained from sectional analysis of AFM images were compared with results obtained from Glancing Angle X-ray Diffraction (GAXRD) measurements using Scherrer鈥檚 formulae. Phase transformation due to irradiation was observed from Glancing Angle X-ray Diffraction (GAXRD) results. The prominent 2胃 peaks observed in GAXRD spectrum are at 30.67掳, 32.08掳, 43.91掳, 44.91掳 and 52.35掳 in the irradiated films.