Optical and electrical properties of In-doped Cu2ZnSnSe4
详细信息 查看全文
- 作者：S. Giraldoa ; sgiraldo@irec.cat" class="auth_mail" title="E-mail the corresponding author ; C.M. Ruizb ; M. Espí ; ndola-Rodrí ; gueza ; Y. Sá ; ncheza ; M. Placidia ; D. Cozzab ; D. Barakelb ; L. Escoubasb ; A. Pé ; rez-Rodrí ; gueza ; c ; E. Saucedoa
- 关键词：Cu2ZnSnSe4 ; In doping ; Thin film solar cells ; Kesterite
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：151
- 期：Complete
- 页码：44-51
- 全文大小：2485 K
文摘
- •
Morphological, compositional, optical and electrical properties of In-doped CZTSe.
- •
In is effectively introduced into CZTSe layer at doping level.
- •
High In concentrations reduce the RSH and F.F. of solar cell devices.
- •
We present a phenomenological model explaining the grain boundaries deterioration.