Influence of nitrogen-doping concentration on the electronic structure of CuAlO₂ by first-principles studies

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• 作者：Wei-wei Liu ; ^{zmliuwwliu@126.com} ; Hong-xia Chen ; Cheng-lin Liu ; Rong Wang
• 关键词：N-doped CuAlO2 ; First-principles ; Delafossite ; Electronic structure
• 刊名：Physics Letters A
• 出版年：2017
• 出版时间：5 February 2017
• 年：2017
• 卷：381
• 期：5
• 页码：520-523
• 全文大小：1143 K
• 卷排序：381

文摘

Electronic structures of CuAlO2 with different N content were investigated. The higher the N-doping concentration is, the narrower the band gap. All the CuAlO2 with different N content were structurally stable. The N-doped CuAlO2 shows a typical p-type semiconductor characteristic.