Superior electrical characteristics of novel nanoscale MOSFET with embedded tunnel diode

详细信息    查看全文

• 作者：Meysam Zareiee^a ; Ali A. Orouji^b ; ^{aliaorouji@semnan.ac.ir}
• 关键词：Metal Oxide Semiconductor Field Effect Transistor ; Silicon On Insulator ; Self heating effect ; Floating body effect ; Short channel effects
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：57-67
• 全文大小：665 K
• 卷排序：101

文摘

A novel nano-scale double silicon window MOSFET (DSW-MOSFET) is proposed. The heart of the proposed structure is an embedded tunnel diode. Floating body effects are significantly controlled in the DSW-MOSFET. The self heating and short channel effects improve in the proposed structure.