Post-deposition processing and oxygen content of TiO₂-based capacitors

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• 作者：K. Frö ; hlich^a ; ^{karol.frohlich@savba.sk"" rel=""nofollow} ; B. Hudec^a ; J. Aarik^b ; A. Tarre^b ; D. Machajdí ; k^a ; A. Kasikov^b ; K. Huš ; eková ; ^a ; Š ; . Ga&#x17e ; i^a
• 关键词：DRAM ; Post-deposition processing ; Atomic layer deposition ; TiO₂
• 刊名：Microelectronic Engineering
• 出版年：2011
• 出版时间：July 2011
• 年：2011
• 卷：88
• 期：7
• 页码：1525-1528
• 全文大小：317 K

文摘

Properties of TiO₂-based capacitors with RuO₂ bottom electrode were examined. It is shown that post-deposition room temperature plasma treatment and oxygen annealing at 300 °C significantly reduces amount of impurities in the TiO₂ layer. Leakage current density of the capacitors is suppressed due to improvement of oxygen stoichiometry and increase of Schottky barrier height at the TiO₂-dielectric/metal electrode interface after post-deposition processing. Leakage current density below 10⁻⁷ A/cm² was achieved for capacitor with equivalent oxide thickness of 0.58 nm.