Modeling anomalous charge carrier transport in disordered organic semiconductors using the fractional drift-diffusion equation

详细信息    查看全文

• 作者：K.Y. Choo^a ; ^b ; ^{kychoo@mmu.edu.my} ; ^{kychoo77@gmail.com} ; S.V. Muniandy^a ; K.L. Woon^a ; M.T. Gan^b ; D.S. Ong^b
• 关键词：Organic semiconductor ; Anomalous diffusion ; Fractional calculus ; Fractional drift-diffusion equation ; Disorder charge transport
• 刊名：Organic Electronics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：41
• 期：Complete
• 页码：157-165
• 全文大小：899 K
• 卷排序：41

文摘

Anomalous transport in P3HT is modeled with time fractional drift-diffusion equation. Dispersive currents at various fields and light intensities are fitted well by TFDDE. Charge carriers escape easily from traps and yield higher current at high field. Hopping of charge carriers at high light intensity level is less dispersive. Transport dynamic in RR-P3HT is less dispersive with higher mobility than RRa-P3HT.