Creation of a new high voltage device with capable of enhancing driving current and breakdown voltage

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• 作者：Mohammad K. Anvarifard ^{m.anvarifard@guilan.ac.ir}
• 关键词：Driving current ; Breakdown voltage ; SOI MESFET ; N-type and P-type wells
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：60
• 期：Complete
• 页码：60-65
• 全文大小：755 K
• 卷排序：60

文摘

This work reports a novel SOI MESFET including silicon N-type and P-type wells inside the drift and buried oxide regions. The drift-diffusion equations along with the main physical models such as impact ionization, Shockley-Read-Hall and self-heating effect are carefully solved inside the structures. Modification of the potential profile occurs in the channel region and results in decrease in peak electric field. Output power density is successfully boosted owing to improved driving current and breakdown voltage, simultaneously. In addition, self-heating effect is alleviated in the proposed structure due to decreased effective thermal resistance of the channel region. Comprehensive DC and AC performance comparisons show that the proposed device promises a more reliable candidate than the conventional SOI structure for high voltage applications.